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| SMG2304A 2.5A, 30V,RDS(ON) 117m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L Description The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG2304A is universally used for all commercial-industrial applications. S 2 3 Top View SC-59 B 1 Dim A B C D J K Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 D G C H Drain Gate Source G H J K L S Features * Small Package Outline * Simple Drive Requirment D All Dimension in mm G Marking : 2304A S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 20 2.5 2.0 10 1.38 0.01 -55~+150 Unit V V A A A W W / oC o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 90 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG2304A 2.5A, 30V,RDS(ON) 117m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 o o Unless otherwise specified) Symbol BVDSS Min. 30 _ Typ. _ Max. _ _ Unit V V/ V nA uA uA Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=2.5A o BVDS/ Tj VGS(th) IGSS IDSS 0.1 _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 100 1 10 117 190 5 _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs Rg _ _ _ _ m[ VGS=4.5V, ID=2A ID=2.5A VDS=24V VGS=4.5V Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Gate Resistance 3 0 .8 1.8 5 9 11 2 120 62 24 2 1.67 nC _ _ _ _ _ _ _ VDS=15V ID=1A nS VGS=10V RG=3.3[ RD=15[ _ _ _ 190 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ _ _ S [ VDS=10V, ID=2.5A f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. _ _ Typ. _ Max. 1.2 Unit V Test Condition IS=1.2A, VGS=0V. Is=2A,VGS=0V dl/dt=100A/uS Reverse Recovery Time2 Reverse Recovery Charge 24 _ _ nS _ 23 nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG2304A 2.5A, 30V,RDS(ON) 117m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of http://www.SeCoSGmbH.com/ Reverse Diode 01-Jun-2002 Rev. A Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SMG2304A 2.5A, 30V,RDS(ON) 117m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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